• DocumentCode
    1620144
  • Title

    Using static voltage analysis and voltage-aware DRC to identify EOS and oxide breakdown reliability issues

  • Author

    Hogan, Matthew ; SRINIVASAN, SUDARSHAN ; Medhat, Dina ; Ziyang Lu ; Hofmann, Martin

  • Author_Institution
    Mentor Graphics, Wilsonville, OR, USA
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Critical DRC spacing rules for high-voltage signals and the use of thin oxides for low-power applications leave ICs vulnerable to electrical overstress and other reliability issues, which may lead to oxide breakdown. New verification techniques provide diagnostic insight into reliability issues due to oxide breakdown, and identify opportunities for design improvements.
  • Keywords
    electrostatic discharge; integrated circuit design; integrated circuit reliability; EOS; critical DRC spacing; electrical overstress; high-voltage signal; low-power application; oxide breakdown reliability; static voltage analysis; thin oxides; verification technique; voltage-aware DRC; Earth Observing System; Electric breakdown; Layout; Logic gates; Rails; Reliability engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6635948
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1620144