DocumentCode
1620151
Title
Critical design considerations for GaN-based microwave power varactors
Author
Wei Lu ; Lingquan Wang ; Siyuan Gu ; Asbeck, P.M. ; Yu, Paul K. L.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fYear
2012
Firstpage
1
Lastpage
4
Abstract
In this paper, we demonstrate the critical design considerations for GaN-based microwave power varactors for the purpose of achieving high breakdown voltage, high Q-factor and high linearity. The extraction of these parameters from a real GaN-based power varactor diode is also presented. High values of these parameters are obtained, which is critical for the applications in the wireless base-station communications.
Keywords
gallium compounds; microwave circuits; radiocommunication; varactors; GaN; GaN-based microwave power varactors; Q-factor; power varactor diode; wireless base-station communications; Gallium nitride; Leakage currents; Linearity; Q-factor; Resistance; Schottky diodes; Varactors; GaN varactor; high Q; high linearity; high voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location
Bangkok
Print_ISBN
978-1-4673-5694-7
Type
conf
DOI
10.1109/EDSSC.2012.6482881
Filename
6482881
Link To Document