Title :
A novel thermal-shutdown protection circuit
Author :
Bin, Zhang ; Quan-Yuan, Feng
Author_Institution :
Inst. of Microelectron., Southwest Jiaotong Univ., Chengdu, China
Abstract :
A new type thermal-shutdown circuit has been designed in UMC 0.6 um BiCMOS process. A feedback is used to solve the problem of thermal-oscillation and a shunt regulator circuit is used to solve the problem of the limit of the technology model. This thermal-shutdown circuit has simple structure, process insensitive and low power dissipation. It can be widely used for modularize in power management ICs. HSPICE simulation results shows that the circuit has excellent capability of power supply rejection and operated in power range from 2 V to 12 V. The error between Activation temperature and deactivation temperature remained basically unchanged for 29degC.
Keywords :
BiCMOS integrated circuits; power supply circuits; BiCMOS process; HSPICE; deactivation temperature; shunt regulator circuit; size 0.6 micron; thermal-oscillation; thermal-shutdown protection circuit; voltage 2 V to 12 V; BiCMOS integrated circuits; Electronic circuits; Energy management; Feedback circuits; Microelectronics; Power dissipation; Protection; Regulators; Temperature sensors; Voltage; BiCMOS; Feedback; Modularize; Themral-shutdown;
Conference_Titel :
Anti-counterfeiting, Security, and Identification in Communication, 2009. ASID 2009. 3rd International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3883-9
Electronic_ISBN :
978-1-4244-3884-6
DOI :
10.1109/ICASID.2009.5276996
