A new analytical model of GaAs MESFET´s: DC and sensitivity analysis

Author

Rizk, M.R.M. ; Saleh, M.B. ; Aboulsoud, A.K. ; El-Sherif, A.Y.

Author_Institution

Fac. of Eng., Alexandria Univ., Egypt

fYear

1992

Firstpage

404

Abstract

An analytical, physically based, GaAs MESFET model is used to generate the parameters of the AC small-signal equivalent circuit. In the saturated operation the conducting channel is represented by a two-resistive part model, namely, the full-depleted layer and graded-depleted layer parts. The latter part mainly depends on the channel-length modulation parameter L. For a 1-μm gate-length FET, I-V characteristics are obtained and the AC equivalent circuit parameters are evaluated as functions of drain-source and gate-source bias voltages. A comparison with a two-dimensional simulation-based model parameters is carried out. A considerable minimization of error for this analytical model is noted

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; sensitivity analysis; 1 micron; AC small-signal equivalent circuit; DC analysis; GaAs devices; I-V characteristics; III-V semiconductor; MESFET model; analytical model; channel-length modulation parameter; drain-source bias voltages; full-depleted layer; gate-source bias voltages; graded-depleted layer; minimization of error; sensitivity analysis; two-dimensional simulation-based model parameters; two-resistive part model; Analytical models; Circuit simulation; Computational modeling; Equivalent circuits; Gallium arsenide; Genetic expression; MESFET circuits; Packaging; Sensitivity analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on

Conference_Location

Washington, DC

Print_ISBN

0-7803-0510-8

Type

conf

DOI

10.1109/MWSCAS.1992.271276

Filename

271276