Title :
A study on channel potential for lightly-doped gate-all-around 6H-SiC nanowire FETs
Author :
Ru Han ; Man Zhang
Author_Institution :
Sch. of Comput. Sci. & Eng., Northwestern Polytech. Univ., Xi´an, China
Abstract :
A continuous and analytic channel potential model for lightly doped gate-all-around (GAA) 6H-SiC nanowire (NW) FETs is developed incorporating the influence of incomplete dopant ionization. By solving the 1D Poisson´s equation, and using Lambert-W function, the channel potential and the inversion charge are adequately described from the sub-treshold to the strong inversion.
Keywords :
Poisson equation; insulated gate field effect transistors; nanowires; semiconductor device models; semiconductor doping; silicon compounds; wide band gap semiconductors; 1D Poisson equation; GAAFET; Lambert-W function; SiC; analytic channel potential model; incomplete dopant ionization; inversion charge; lightly doped gate all around nanowire FET; Analytical models; Field effect transistors; Logic gates; Mathematical model; Semiconductor device modeling; Silicon carbide; Temperature; 6H-SiC; channel potential; gate-all-around (GAA); lightly doped; nanowire FET;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482888
