DocumentCode
1620340
Title
Use of IGBT-gated GTO-cascode switches in resonant converters
Author
Chan, T.K. ; Morcos, M.M.
Author_Institution
Kansas State Univ., Manhattan, KS, USA
fYear
1992
Firstpage
391
Abstract
The use of recently available high-voltage insulated gate bipolar transistor (IGBT) to improve switching performance of a gate turn-off (GTO) thyristor in a cascode configuration is documented. The IGBT-gated GTO-cascode switch features simple drive requirement, fast switching, robustness, and overcurrent protection. The cascode switch is applied in a quasi-resonant converter. Results indicate that IGBT-gated GTO-cascode switches are promising candidates for high-power and high-frequency applications
Keywords
insulated gate bipolar transistors; overcurrent protection; power convertors; semiconductor switches; thyristor applications; 1200 V; 140 A; 30 kHz; IGBT-gated GTO-cascode switches; fast switching; gate turn-off thyristor; high-frequency applications; high-power applications; overcurrent protection; quasi-resonant converter; resonant converters; robustness; switching performance; Current supplies; Electric breakdown; Insulated gate bipolar transistors; MOSFET circuits; Power semiconductor switches; Resonance; Switching circuits; Switching converters; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location
Washington, DC
Print_ISBN
0-7803-0510-8
Type
conf
DOI
10.1109/MWSCAS.1992.271279
Filename
271279
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