Title :
High-gain bandwidth product Si/InGaAs avalanche photodetectors
Author :
Weishu Wu ; Hawkins, A.R. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Abstract :
High gain, large bandwidth, and low noise avalanche photodetectors (APDs) are increasingly attractive for use in high-bit-rate optical communication systems because of the internal gain provided by APDs. Silicon avalanche photodetectors are well-known for their large gain bandwidth product, low excess noise figure, and good temperature sensitivity. Using wafer fusion, we have demonstrated an 81-GHz gain bandwidth product Si/InGaAs APD, which can be used in the 1.3-1.6 μm wavelength regime. Here, we analyze the performance of Si/InGaAs APDs and present the optimized design for these APDs
Keywords :
III-V semiconductors; avalanche photodiodes; elemental semiconductors; gallium arsenide; indium compounds; photodetectors; silicon; 1.3 to 1.6 micron; Si-InGaAs; Si/InGaAs avalanche photodetector; excess noise figure; gain bandwidth product; optical communication system; temperature sensitivity; wafer fusion; Bandwidth; Design optimization; Indium gallium arsenide; Noise figure; Optical fiber communication; Optical noise; Performance analysis; Photodetectors; Silicon; Temperature sensors;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719667
