Title :
Thermally induced current constriction in III-V heterojunction bipolar transistors
Author :
Koenig, Eric ; Schneider, Jürgen ; Seiler, Ulrich ; Erben, Uwe
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
The current through HBTs with different emitter lengths is shown to be constricted to practically identical areas as a result of the lateral temperature distribution and negative temperature coefficient of the base-emitter voltage
Keywords :
temperature distribution; III-V HBT; base-emitter voltage; emitter lengths; heterojunction bipolar transistors; lateral temperature distribution; negative temperature coefficient; thermally induced current constriction; Circuits; Current distribution; Fingers; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Temperature dependence; Temperature distribution; Thermal resistance; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587878
