Title :
The design of sub-threshold reference circuit using resistor temperature compensation
Author :
Cai, Xiaowei ; Luo, Li ; Li, Zheying
Author_Institution :
Sch. of Electron. & Eng., Beijing Jiao Tong Univ., Beijing, China
Abstract :
A reference circuit employing sub-threshold current is presented, which uses two CTAT currents and resistor temperature compensation to generate a reference voltage of 200 mV. Since most of MOSFETs are working at sub-threshold region, the circuit only consumes 716 nW at supply voltage of 1 V with PSRR of -53.5dB at room temperature using TSMC 0.18 mum technology. The reference voltage´s average temperature coefficient is 25 ppm/deg in the range [-25, +125]deg and its variation is 2.26 mV/V for supply voltage from 0.8 to 2.5 V.
Keywords :
MOSFET; network synthesis; resistors; MOSFET; resistor temperature compensation; size 0.18 mum; subthreshold current; subthreshold reference circuit; temperature 293 K to 298 K; voltage 200 mV to 2.5 V; Character generation; Design engineering; Energy consumption; Intrusion detection; MOSFET circuits; Power generation; Resistors; Silicon; Temperature distribution; Threshold voltage; low power consumption; sub-threshold; temperature coefficient; voltage reference;
Conference_Titel :
Anti-counterfeiting, Security, and Identification in Communication, 2009. ASID 2009. 3rd International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3883-9
Electronic_ISBN :
978-1-4244-3884-6
DOI :
10.1109/ICASID.2009.5277005
