Title :
Trench DRAM structures for the analysis of two- and three-dimensional leakage phenomena
Author :
Voldman, Steven H.
Author_Institution :
IBM, Essex Junction, VT, USA
Abstract :
Two- and three-dimensional leakage phenomena in moderately and heavily doped and gate diode structures are analyzed using a novel set of macro-array trench DRAM (dynamic random-access memory) capacitor storage nodes and planar MOS drain structures. Heavily doped gated diode structures (trench and planar) are used for the analysis of the gate-induced thermal generation mechanism and band-to-band tunneling. The results are relevant for understanding the leakage phenomena in trench DRAM and MOSFET drain structures
Keywords :
DRAM chips; MOS integrated circuits; tunnelling; MOSFET drain structures; band-to-band tunneling; capacitor storage nodes; gate diode structures; gate-induced thermal generation mechanism; heavily doped structures; macro-array trench DRAM; planar MOS drain structures; three-dimensional leakage phenomena; two-dimensional leakage phenomena; EPROM; Implants; Leakage current; MOS capacitors; MOSFET circuits; Power MOSFET; Random access memory; Semiconductor device testing; Semiconductor diodes; Tunneling;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161720
