Title :
On threshold voltage modeling and variability in junctionless nanowires FETs
Author_Institution :
Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
Abstract :
Analytical expression of the threshold voltage of Junctionless field-effect transistor (JL-FET) is derived. The model enables a fast and comprehensive analysis of the sensitivity of JL-FET operations to process variation and mismatch including line edge/width roughness, random dopant fluctuation and oxide thickness. The model is validated through a set of comparative tests with TCAD simulations.
Keywords :
field effect transistors; nanowires; semiconductor doping; JL-FET; junctionless field-effect transistor; junctionless nanowires FET; process variation; random dopant fluctuation; threshold voltage modeling; Accuracy; Biological system modeling;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482898
