Title :
A new approach for extracting base width modulation parameters in bipolar transistors
Author_Institution :
Semicond. Products Center, Motorola Inc., Mesa, AZ, USA
Abstract :
A new dc measurement technique that allows a direct observation of the Early effects and the base push-out effect in vertical bipolar transistors is described. The technique uses a special test structure and may be used to accurately determine the forward and reverse Early voltages used in the Gummel Poon model. The improvements provided by this method over conventionally used parameter extraction techniques are demonstrated through measurements on silicon and through two-dimensional device simulations
Keywords :
semiconductor device models; Early effects; Gummel Poon model; base push-out effect; base width modulation parameters; dc measurement technique; test structure; two-dimensional device simulations; vertical bipolar transistors; Bipolar transistors; Measurement techniques; Modems; Parameter extraction; Reactive power; Semiconductor process modeling; Silicon; Testing; Virtual manufacturing; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587881