DocumentCode :
1620608
Title :
Practical medium voltage converter topologies for high power applications
Author :
Steimer, Peter K. ; Manjrekar, Madhav D.
Author_Institution :
R&D Drives & Power Electron., ABB Ind AG, Turgi, Switzerland
Volume :
3
fYear :
2001
Firstpage :
1723
Abstract :
Multilevel power conversion has been receiving increasing attention in the past few years for high power applications. Numerous topologies and modulation strategies have been introduced and studied extensively for utility and drive applications in the recent literature. These converters are suitable in high voltage and high power applications due to their ability to synthesize waveforms with better harmonic spectrum and attain higher voltages with a limited maximum device rating. Trends in power semiconductor technology indicate a trade-off in the selection of power devices in terms of switching frequency and voltage sustaining capability. New multi-level, high power converter topologies have been proposed using a hybrid approach involving integrated gate commutated thyristors (IGCT) and insulated gate bipolar transistors (IGBT) operating in synergism. This paper is further developing and optimizing this approach presenting a hybrid nine-level inverter operating at a 4160 V system voltage. Excellent current and voltage waveforms can be achieved even in weak network conditions. Additionally it is shown, that the multi-level conversion system can further be simplified by utilizing series connected H-bridges without the need of supply transformers and rectifiers.
Keywords :
DC-AC power convertors; bipolar transistor switches; bridge circuits; insulated gate bipolar transistors; invertors; power bipolar transistors; power convertors; power semiconductor switches; switching circuits; thyristor convertors; thyristors; 4160 V; current waveforms; high power applications; insulated gate bipolar transistors; integrated gate commutated thyristors; medium voltage converter topologies; modulation strategies; multilevel power conversion; nine-level inverter; power semiconductor technology; series connected H-bridges; switching frequency; voltage sustaining capability; voltage waveforms; Insulated gate bipolar transistors; Inverters; Medium voltage; Power conversion; Power system harmonics; Rectifiers; Switching frequency; Thyristors; Topology; Transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location :
Chicago, IL, USA
ISSN :
0197-2618
Print_ISBN :
0-7803-7114-3
Type :
conf
DOI :
10.1109/IAS.2001.955765
Filename :
955765
Link To Document :
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