Title :
SiGe HBTs reach the microwave and millimeter-wave frontier
Author :
Kermarrec, C. ; Tewksbury, T. ; Dawe, G. ; Baines, R. ; Meyerson, B. ; Harame, D. ; Gilbert, M.
Author_Institution :
Analog Devices Inc., Wilmington, MA, USA
Abstract :
Silicon germanium heterojunction bipolar transistors (SiGe HBTs) offer significant performance and cost advantages over conventional technologies in the production of integrated circuits for communications, computer and transportation applications. This paper reviews the status of SiGe development, compares SiGe with existing Si and GaAs technologies, and discusses applications extending into the microwave and millimeter-wave regime
Keywords :
heterojunction bipolar transistors; ASICs; HBTs; IC applications; SiGe; cost advantages; microwave ICs; millimeter-wave ICs; Application software; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; Production; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587884
