DocumentCode :
1620662
Title :
Polarized radiation thermometry of silicon wafers near room temperature
Author :
Sugawara, H. ; Iuchi, T.
Author_Institution :
Toyo Univ., Kawagoe, Japan
Volume :
1
fYear :
2004
Firstpage :
646
Abstract :
Silicon semiconductor wafers near room temperature are semitransparent at a wavelength more than 1.1 /spl mu/m, which makes radiation thermometry near room temperature difficult. We have measured apparent radiances of silicon wafers with oxide film (SiO/sub 2/) near room temperature from the view point of spectral, directional and polarized properties, and obtained in turn apparent polarized emissivities and transmissivities of the wafers. Based on the experimental results, we have proposed radiation thermometry of silicon wafers near room temperature.
Keywords :
blackbody radiation; emissivity; optical sensors; semiconductor technology; silicon; temperature measurement; thermometers; polarized emissivity; polarized radiation thermometry; room temperature; silicon semiconductor wafer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SICE 2004 Annual Conference
Conference_Location :
Sapporo
Print_ISBN :
4-907764-22-7
Type :
conf
Filename :
1491484
Link To Document :
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