Title :
SiGe bipolar ICs for 20 Gb/s optical transmitter
Author :
Hashimoto, T. ; Tezuka, H. ; Sato, F. ; Soda, M. ; Suzaki, T. ; Tatsumi, T. ; Tashiro, T.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
SiGe bipolar ICs, a selector, a multiplier and a D-type flip-flop, have been developed for a 20 Gb/s optical transmitter by using a self-aligned SiGe base bipolar transistor with bonded SOI technology. In the selector IC and the multiplier IC, an internal high speed clock buffer circuit accomplishes stable operation under a single clock input condition
Keywords :
Ge-Si alloys; 20 Gbit/s; D-type flip-flop; SiGe; bipolar ICs; bonded SOI technology; internal high speed clock buffer circuit; multiplier; optical transmitter; selector; self-aligned bipolar transistor; single clock input condition; Bipolar integrated circuits; Bipolar transistors; Bonding; Clocks; Germanium silicon alloys; High speed integrated circuits; Laboratories; National electric code; Optical transmitters; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587886
