DocumentCode
1620716
Title
A low local input power 1.9 GHz Si-bipolar quadrature modulator without any adjustment
Author
Otaka, Shoji ; Yamaji, Takafumi ; Fujimoto, Ryuichi ; Takahashi, Chikau ; Tanimoto, Hiroshi
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1994
Firstpage
171
Lastpage
174
Abstract
A 1.9 GHz quadrature modulator with on-chip 90° phase-shifter was fabricated in a silicon bipolar technology. An image-rejection ratio over 45 dB and a carrier feed-through below -40 dBc were attained at -15 dBm local input power from 2.7 V supply. A die size of quadrature modulator IC is 2.49 mm×2.14 mm
Keywords
quadrature amplitude modulation; 1.9 GHz; 2.7 V; QMODs; Si; bipolar IC technology; carrier feed-through; die size; image-rejection ratio; local input power; on-chip 90° phase-shifter; portable wireless equipment; quadrature modulator; BiCMOS integrated circuits; Distortion; Energy consumption; Filters; Frequency synthesizers; Gallium arsenide; MESFETs; Phase modulation; Research and development; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1994.587887
Filename
587887
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