Title :
High Q inductors for wireless applications in a complementary silicon bipolar process
Author :
Ashby, K.B. ; Finley, W.C. ; Bastek, J.J. ; Moinian, S. ; Koullias, I.A.
Author_Institution :
AT&T Microelectron., AT&T Bell Labs., Reading, PA, USA
Abstract :
Rectangular spiral inductors with Q´s as high as 12 have been built in a high-speed complementary bipolar process and characterized for use in wireless applications. An accurate broadband model has been developed for the inductors, and a test filter and mixer have been built to verify the performance of the inductors and the accuracy of the model
Keywords :
Q-factor; Q factor; RF filter; Si; broadband model; complementary bipolar IC process; mixers; rectangular spiral inductors; wireless applications; Aluminum; Electrical resistance measurement; Inductance; Inductors; Integrated circuit technology; Metallization; Q measurement; Silicon; Spirals; Testing;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587889
