DocumentCode :
16208
Title :
Three Fingerprints of Memristor
Author :
Adhikari, Shyam Prasad ; Sah, Maheshwar Pd. ; Hyongsuk Kim ; Chua, Leon O.
Author_Institution :
Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea
Volume :
60
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
3008
Lastpage :
3021
Abstract :
This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.
Keywords :
hysteresis; memristors; bipolar periodic signal; characteristic fingerprints; critical frequency; excitation frequency; hysteresis lobe area; memristor; nontransversal loop; pinched hysteresis loop; self-crossing loop; single-valued function; tangential loop; voltage-current plane; Generalized memristor; ideal memristor; lobe area; memristive device; memristor; non-transversal loop; pinched hysteresis loop; transversal loop;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2013.2256171
Filename :
6549211
Link To Document :
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