Title :
BiCMOS hfe degradation: causes and circuit solution
Author :
McAndrew, Colin C. ; Kizilyalli, Lsik C. ; Bude, Jeff D.
Author_Institution :
AT&T Bell Labs., Allentown, PA, USA
Abstract :
hfe degradation decreases BiCMOS speed and reliability. This paper presents the physical mechanisms of hfe degradation, and a new, simple circuit technique that increases BiCMOS reliability and allows BiCMOS technologies to have lower breakdown voltages
Keywords :
BiCMOS integrated circuits; BiCMOS; IC reliability; IC speed; breakdown voltages; common-emitter forward current gain; hfe degradation; physical mechanisms; BiCMOS integrated circuits; Charge carrier processes; Degradation; Electron emission; Electron traps; Hafnium; Hot carriers; Iron; Stress; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587893
