• DocumentCode
    1620898
  • Title

    Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs

  • Author

    Wei, A. ; Kosier, S.L. ; Schrimpf, R.D. ; Combs, W.E. ; DeLaus, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
  • fYear
    1994
  • Firstpage
    201
  • Lastpage
    204
  • Abstract
    Excess collector current in irradiated NPN BJTs is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter
  • Keywords
    electron traps; emitter extension; excess collector current; inversion layer; irradiated NPN BJTs; oxide-trapped-charge-induced emitter; Analytical models; BiCMOS integrated circuits; Computational modeling; Computer simulation; Cranes; Degradation; Equations; Geometry; Ionizing radiation; Radiative recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1994.587894
  • Filename
    587894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1620898