SiC Schottky diode electrothermal macromodel

Author

Masana, Francesc N.

Author_Institution

Dept. d´´Eng. Electron. (DEE), Univ. Politec. de Catalunya (UPC), Barcelona, Spain

fYear

2010

Firstpage

371

Lastpage

374

Abstract

This paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for each block are easy to extract, even from readily available diode data sheet information. The model complexity is low thus allowing reasonably long simulation times to cope with the rather slow self heating process and yet accurate enough for practical purposes.

Keywords

Schottky diodes; circuit complexity; semiconductor device models; silicon compounds; wide band gap semiconductors; SPICE analog behavioral modeling controlled sources; SiC; SiC Schottky diode electrothermal macromodel; diode data sheet information; model complexity; self heating process; Biological system modeling; Capacitance; Integrated circuit modeling; Mathematical model; Schottky diodes; Silicon carbide; Temperature measurement; ABM; RC thermal model; SiC Schottky; self heating; temperature coefficient; voltage controlled capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2010 Proceedings of the 17th International Conference

Conference_Location

Warsaw

Print_ISBN

978-1-4244-7011-2

Electronic_ISBN

978-83-928756-4-2

Type

conf

Filename

5551656