DocumentCode
1620943
Title
Effect of current and voltage stress on the DC characteristics of SiGe-base heterojunction bipolar transistors
Author
Liao, Kenneth ; Reif, Rafael ; Kamins, Theodore I.
Author_Institution
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fYear
1994
Firstpage
209
Lastpage
212
Abstract
Degradation of SiGe-base HBTs under high-forward-current and reverse-bias stresses are investigated. The observations are explained using existing homojunction theories. Inclusion of Ge into the base may potentially improve the junction reliability of bipolar transistors
Keywords
heterojunction bipolar transistors; DC characteristics; SiGe; current stress; heterojunction bipolar transistors; high-forward-current stresses; homojunction theories; junction reliability; reverse-bias stresses; voltage stress; Bipolar transistors; Degradation; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Laboratories; Silicon germanium; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1994.587896
Filename
587896
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