Title :
52 GHz epitaxial base bipolar transistor with high Early voltage of 26.5 V with box-like base and retrograded collector impurity profiles
Author :
Inou, K. ; Matsuda, S. ; Nakajima, H. ; Sugiyama, N. ; Usuda, K. ; Imai, Suguru ; Kawaguchi, Y. ; Yamada, K. ; Katsumata, Y. ; Iwai, Hisato
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
UHV-CVD epitaxial base transistors having 52 GHz cutoff frequency and 26.5 V Early voltage have been fabricated by adopting a box like base and retrograded collector impurity profiles. In addition, to improve the epitaxial film quality, a hydrotermination technique is used
Keywords :
bipolar transistors; 26.5 V; 52 GHz; UHV-CVD epitaxial base; box-like base; epitaxial base bipolar transistor; epitaxial film quality; high Early voltage; hydrotermination technique; retrograded collector impurity profiles; Acceleration; Analytical models; Bipolar transistors; Circuit simulation; Cutoff frequency; Doping profiles; Impurities; Silicon; Temperature; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587898
