DocumentCode
1620977
Title
52 GHz epitaxial base bipolar transistor with high Early voltage of 26.5 V with box-like base and retrograded collector impurity profiles
Author
Inou, K. ; Matsuda, S. ; Nakajima, H. ; Sugiyama, N. ; Usuda, K. ; Imai, Suguru ; Kawaguchi, Y. ; Yamada, K. ; Katsumata, Y. ; Iwai, Hisato
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1994
Firstpage
217
Lastpage
220
Abstract
UHV-CVD epitaxial base transistors having 52 GHz cutoff frequency and 26.5 V Early voltage have been fabricated by adopting a box like base and retrograded collector impurity profiles. In addition, to improve the epitaxial film quality, a hydrotermination technique is used
Keywords
bipolar transistors; 26.5 V; 52 GHz; UHV-CVD epitaxial base; box-like base; epitaxial base bipolar transistor; epitaxial film quality; high Early voltage; hydrotermination technique; retrograded collector impurity profiles; Acceleration; Analytical models; Bipolar transistors; Circuit simulation; Cutoff frequency; Doping profiles; Impurities; Silicon; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1994.587898
Filename
587898
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