• DocumentCode
    1621016
  • Title

    Process integration technology for low process complexity BiCMOS using trench collector sink

  • Author

    Yoshida, Hiroshi ; Suzuki, Hisamitsu ; Kinoshita, Yasushi ; Imai, Kiyotaka ; Akimoto, Takeshi ; Tokashiki, Ken ; Yamazaki, Tohru

  • Author_Institution
    ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
  • fYear
    1994
  • Firstpage
    230
  • Lastpage
    233
  • Abstract
    A BiCMOS process integration technology featuring a W-plug trench collector sink simultaneously formed with an emitter defining step is presented. This technology can provide a low resistance collector sink without any additional process steps to form the collector sink and realizes a low cost 0.35 μm BiCMOS device with only 11 photo-masks
  • Keywords
    BiCMOS integrated circuits; 0.35 micron; W; W-plug; low process complexity BiCMOS; low resistance collector sink; process integration technology; trench collector sink; BiCMOS integrated circuits; CMOS technology; Costs; Cutoff frequency; Dry etching; Fabrication; Laboratories; Plugs; Silicon; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1994.587901
  • Filename
    587901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1621016