• DocumentCode
    1621131
  • Title

    Amorphous silicon based anti-fuse

  • Author

    LaDuca, A.J.

  • Author_Institution
    AT&T Microelectron., Allentown, PA, USA
  • fYear
    1993
  • Firstpage
    20
  • Lastpage
    23
  • Abstract
    The author describes the use of amorphous silicon for anti-fuses in the fabrication of programmable array logic (PAL) devices. The amorphous silicon is deposited using a low temperature PECVD process so as not to affect device parameters. This process results in anti-fuses with an off state resistance, Roff, greater than 10 MOhm and an on state resistance, Ron less than 200 Ohms. This low value of Ron makes it possible to produce very high speed PALs
  • Keywords
    programmable logic arrays; PLA; Si-TixOy; amorphous Si; anti-fuses; elemental semiconductor; low on-state resistance; low programming voltages; low temperature PECVD; programmable array logic; very high speed; Programmable logic arrays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1993.617459
  • Filename
    617459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1621131