Title :
Amorphous silicon based anti-fuse
Author_Institution :
AT&T Microelectron., Allentown, PA, USA
Abstract :
The author describes the use of amorphous silicon for anti-fuses in the fabrication of programmable array logic (PAL) devices. The amorphous silicon is deposited using a low temperature PECVD process so as not to affect device parameters. This process results in anti-fuses with an off state resistance, Roff, greater than 10 MOhm and an on state resistance, Ron less than 200 Ohms. This low value of Ron makes it possible to produce very high speed PALs
Keywords :
programmable logic arrays; PLA; Si-TixOy; amorphous Si; anti-fuses; elemental semiconductor; low on-state resistance; low programming voltages; low temperature PECVD; programmable array logic; very high speed; Programmable logic arrays;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617459
