Title :
Magneto-resistive elements-an alternative to floating gate technology
Author :
Ranmuthu, I.W. ; Ranmuthu, K.T.M. ; Eray, M. ; Comstock, C.S. ; Hassoun, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
Abstract :
Magnetoresistive elements have previously been fabricated and tested for storage of data. Due to the nonvolatile property of these elements they can be used to replace floating gate storage cells. A programmable logic array (PLA) using on-chip magnetoresistive elements is simulated and its layout shown to illustrate the applicability of these elements. The die size for the 6×16×4 PLA is 2000 μm×2000 μm with 2-μm technology. The PLA has a delay of 20 ns during normal operation. Programming time is 20 ns/cross point, and power up time is 1 μs
Keywords :
logic arrays; magnetoresistive devices; 1 mus; 2 micron; 20 ns; PLA; data storage; delay; nonvolatile property; on-chip magnetoresistive elements; programmable logic array; programming time; shadow RAM cells; Circuits; Conductors; Differential amplifiers; Electric resistance; Logic arrays; Magnetic fields; Magnetic films; Magnetization; Programmable logic arrays; Voltage;
Conference_Titel :
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-0510-8
DOI :
10.1109/MWSCAS.1992.271314
