Title :
Simulation results of a modified MOST structure
Author :
Talkhan, Elsayed A.
Author_Institution :
Dept. of Electron. & Commun., Cairo Univ., Giza, Egypt
Abstract :
A modified MOST (metal-oxide-semiconductor transistor) physical structure that gives higher current and higher transconductance for the same VT is suggested. For an n-channel MOST, the suggested structure uses a floating buried n+ layer below the gate area at a distance approximately equal to the maximum depletion layer width below the silicon-oxide interface. Computer simulation using PISCES-IIB is used to characterize the suggested structure. Results obtained verified the anticipated increase in drain current and transconductance
Keywords :
digital simulation; electronic engineering computing; insulated gate field effect transistors; semiconductor device models; 2D device simulator; MOSFET; PISCES-IIB; Si-SiO2; computer simulation; drain current; floating buried n+ layer; maximum depletion layer width; modified MOST structure; n-channel; transconductance; Computer simulation; Digital circuits; Feeds; Graphics; Inverters; Packaging; Solid state circuits; Substrates; Transconductance; Virtual colonoscopy;
Conference_Titel :
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-0510-8
DOI :
10.1109/MWSCAS.1992.271317
