DocumentCode :
1621328
Title :
Reliability of power cycling for IGBT power semiconductor modules
Author :
Morozumi, A. ; Yamada, K. ; Miyasaka, T. ; Seki, Y.
Author_Institution :
Matsumoto Factory, Fuji Electr. Co. Ltd., Nagano, Japan
Volume :
3
fYear :
2001
Firstpage :
1912
Abstract :
Power cycling capability is one of the most important reliability items in application semiconductor modules. This paper describes the mechanism of power cycling by analysis of the structure of lead-based solder and joint failure due to fatigue was studied to ascertain improvement in the power cycling lifetime. Lead-based solder has a relatively weaker yield-strength which means that plastic deformation leads to deterioration. Therefore, tin-silver based solder was selected as a higher yield-strength material, and a new composition which has both excellent mechanical properties and wettability was developed. Concerning the failure mechanism of power cycling for this newly developed solder material, solder joint failure and aluminum wire bond failure were clearly distinguished, and the lifetime prediction curve was clarified by FEM analysis and detailed failure analysis. Furthermore, it was proved that the deterioration of new tin-silver based solder is caused by thermal fatigue with the grain growth of tin. Thus, longer power cycling capability is achieved by using this newly developed solder instead of conventional lead-based solder.
Keywords :
failure analysis; fatigue; finite element analysis; insulated gate bipolar transistors; modules; power bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device reliability; semiconductor device testing; soldering; FEM analysis; IGBT power semiconductor modules; aluminum wire bond failure; failure mechanism; fatigue; joint failure; lead-based solder; lifetime prediction curve; mechanical properties; plastic deformation; power cycling reliability; solder joint failure; wettability; Composite materials; Failure analysis; Fatigue; Insulated gate bipolar transistors; Joining materials; Lead; Mechanical factors; Plastics; Semiconductor device reliability; Soldering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location :
Chicago, IL, USA
ISSN :
0197-2618
Print_ISBN :
0-7803-7114-3
Type :
conf
DOI :
10.1109/IAS.2001.955791
Filename :
955791
Link To Document :
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