Title :
Doping concentration variation in the barrier layers of a 462 nm In0.02Ga0.98N QW laser for structure performance improvement
Author :
Dragulinescu, Andrei
Author_Institution :
Fac. of ETTI, Politeh. Univ. of Bucharest, Bucharest, Romania
Abstract :
Lasers with quantum wells, based on the InGaN material system, have been researched for more than a decade, taking advantage from their wide bandgap energy, high emission efficiency and possibility of working in various spectra (red, green, blue, ultraviolet). We investigated if, for a structure of a 462 nm (blue) In0.02Ga0.98N QW laser, the variation of doping concentration in the barrier layers of the structure may lead to obtaining a lower threshold current, a higher slope efficiency and external differential quantum efficiency.
Keywords :
III-V semiconductors; doping profiles; gallium compounds; indium compounds; laser beams; quantum well lasers; wide band gap semiconductors; In0.02Ga0.98N; barrier layers; blue QW laser; doping concentration; emission efficiency; external differential quantum efficiency; quantum well laser; slope efficiency; structure performance improvement; threshold current; wavelength 462 nm; wide bandgap energy; Computer aided software engineering; Diode lasers; Doping; Radiative recombination; Semiconductor lasers; Threshold current; InGaN; barrier layers; doping concentration; laser; quantum well;
Conference_Titel :
Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on
Conference_Location :
Pitesti
Print_ISBN :
978-1-4673-4935-2
DOI :
10.1109/ECAI.2013.6636166
