Title :
The effect of trench processing conditions on complementary bipolar analog devices with SOI/trench isolation
Author :
Jerome, R. ; Post, I. ; Huffstater, K. ; Wodek, G. ; Travnicek, P. ; Williams, D.
Author_Institution :
United Technol. Microelectron. Center, Colorado Springs, CO, USA
Abstract :
Trench processing conditions are optimized for manufacturability of complementary bipolar analog devices and are correlated to transistor Iceo leakage and Vbe matching characteristics. Cross-section SEM analysis, computer simulation, and Raman spectroscopy are used to characterize the stresses related to the SOI/trench/LOCOS structure
Keywords :
isolation technology; ACUTE technology; LOCOS; ONO process; Raman spectroscopy; SOI; Si; Si-SiO2; TSUPREM-4 simulation; complementary bipolar analog devices; computer simulation; cross-section SEM; current leakage; hard mask; manufacturability; stresses; trench isolation; trench processing conditions; Complementary circuits/devices;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617464
