• DocumentCode
    1622323
  • Title

    Geometrical modelling of current gain ratio for a bipolar transistor

  • Author

    Iosif, Florin-Doru

  • Author_Institution
    IT&C Dept., Lumina - Univ. of South-East Eur., Bucharest, Romania
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a method of determining the superior cut-off frequency for bipolar, alloyed transistors. This method is based on a geometrical modelling of the current gain ratio for this type of transistors; the modeling takes in consideration the displacement of the mobile charge carriers and the technological quantities material dependent.
  • Keywords
    bipolar transistors; semiconductor device models; bipolar alloyed transistors; current gain ratio; cut-off frequency; displacement; geometrical modelling; mobile charge carriers; Analytical models; Bipolar transistors; Charge carriers; Materials; Mobile communication; Transfer functions; Transistors; Gain factor; average recombination time; diffusion factor; diffusion length; rated injection; transfer function;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on
  • Conference_Location
    Pitesti
  • Print_ISBN
    978-1-4673-4935-2
  • Type

    conf

  • DOI
    10.1109/ECAI.2013.6636181
  • Filename
    6636181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1622323