Title :
Geometrical modelling of current gain ratio for a bipolar transistor
Author :
Iosif, Florin-Doru
Author_Institution :
IT&C Dept., Lumina - Univ. of South-East Eur., Bucharest, Romania
Abstract :
This paper presents a method of determining the superior cut-off frequency for bipolar, alloyed transistors. This method is based on a geometrical modelling of the current gain ratio for this type of transistors; the modeling takes in consideration the displacement of the mobile charge carriers and the technological quantities material dependent.
Keywords :
bipolar transistors; semiconductor device models; bipolar alloyed transistors; current gain ratio; cut-off frequency; displacement; geometrical modelling; mobile charge carriers; Analytical models; Bipolar transistors; Charge carriers; Materials; Mobile communication; Transfer functions; Transistors; Gain factor; average recombination time; diffusion factor; diffusion length; rated injection; transfer function;
Conference_Titel :
Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on
Conference_Location :
Pitesti
Print_ISBN :
978-1-4673-4935-2
DOI :
10.1109/ECAI.2013.6636181
