TCAD simulation study of two bit storage flash memory using conventional FinFET and junctionless FET

In this paper, two bit storage in single cell floating gate flash memory is simulated and studied using independent gate conventional FinFET and junction-less FET. TCAD simulator is used for generating the memory structure as well as for studying its programming, erasing and reading behaviour. While programming-erasing-reading one of the gates, the other gate can complicate the process. In reading operation it is reflected as a threshold voltage shift. Junctionless FET devices - based flash memory cells are not affected by the other gate whereas the conventional FinFET devices show some degradation w.r.t the noise margin.