Title :
High-efficient electroabsorption modulator to generate 20 6Hz-3.6 ps transform-limited optical pulses
Author :
Oshiba, Saeko ; Nakamura, Koji ; Horihawa, H.
Author_Institution :
R&D Group, Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
In this paper, we report on stable generation of optical short pulses using the highly-efficient InGaAsP electroabsorption (EA) modulators with a very high figure of merit of 35 GHz/V. EA modulators have multiple quantum wells (MQW) as absorption layers designed not only for high extinction ratios but also for polarization independence at a target wavelength range of 1550-1570 nm. The MQW layers consist of seven l0-nm-thick InGaAsP wells
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; semiconductor quantum wells; 1550 to 1570 nm; 3.6 ps; EA modulators; InGaAsP; InGaAsP wells; MQW layers; absorption layers; high extinction ratios; multiple quantum wells; optical short pulses; polarization independence; ps transform-limited optical pulse generation; stable generation; target wavelength range; very high figure of merit; Chirp modulation; Optical fiber devices; Optical fiber polarization; Optical modulation; Optical pulse generation; Optical pulses; Optical sensors; Pulse modulation; Pulse width modulation; Semiconductor optical amplifiers;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719759
