High-efficient electroabsorption modulator to generate 20 6Hz-3.6 ps transform-limited optical pulses

Author

Oshiba, Saeko ; Nakamura, Koji ; Horihawa, H.

Author_Institution

R&D Group, Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1997

Firstpage

136

Lastpage

137

Abstract

In this paper, we report on stable generation of optical short pulses using the highly-efficient InGaAsP electroabsorption (EA) modulators with a very high figure of merit of 35 GHz/V. EA modulators have multiple quantum wells (MQW) as absorption layers designed not only for high extinction ratios but also for polarization independence at a target wavelength range of 1550-1570 nm. The MQW layers consist of seven l0-nm-thick InGaAsP wells

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; semiconductor quantum wells; 1550 to 1570 nm; 3.6 ps; EA modulators; InGaAsP; InGaAsP wells; MQW layers; absorption layers; high extinction ratios; multiple quantum wells; optical short pulses; polarization independence; ps transform-limited optical pulse generation; stable generation; target wavelength range; very high figure of merit; Chirp modulation; Optical fiber devices; Optical fiber polarization; Optical modulation; Optical pulse generation; Optical pulses; Optical sensors; Pulse modulation; Pulse width modulation; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication. OFC 97., Conference on

Conference_Location

Dallas, TX

Print_ISBN

1-55752-480-7

Type

conf

DOI

10.1109/OFC.1997.719759

Filename

719759