Title :
Very low insertion loss (<5 dB) and high-speed InGaAs-InAlAs MQW modulators buried in semi-insulating InP
Author :
Wahita, K. ; Yoshino, K. ; Matsumoto, S. ; Kotaka, I. ; Yoshimoto, N. ; Kondo, S. ; Noguchi, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
We have succeeded in reducing the insertion loss by using thin strain-compensated InGaAs-InAlAs multiple quantum wells (MQWs) and semi-insulating InP burying layers. The resultant modulator modules are also noteworthy for their polarization insensitivity and low chirp. In this paper we explain the use of thin and narrow MQW layers to obtain both low insertion loss and high speed operation. We believe this is the first report of a 14-GHz modulator module with an insertion loss from fiber-to-fiber <5 dB operating at stable single-mode
Keywords :
III-V semiconductors; aluminium compounds; chirp modulation; electro-optical modulation; gallium arsenide; indium compounds; modules; optical films; semiconductor quantum wells; 5 dB; GHz modulator module; InGaAs-InAlAs; InP; fiber-to-fiber loss; high speed operation; high-speed InGaAs-InAlAs MQW modulators; insertion loss; low chirp; low insertion loss; narrow MQW layers; polarization insensitivity; resultant modulator modules; semi-insulating InP; semi-insulating InP burying layers; stable single-mode; thin strain-compensated InGaAs-InAlAs multiple quantum wells; very low insertion loss; Extinction ratio; Indium compounds; Indium gallium arsenide; Insertion loss; Insulation; Optical pulse generation; Optical pulses; Pulse modulation; Pulse width modulation; Quantum well devices;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719760
