InGaAsP-lnGaAsP-InAsP MQW polarization-independent modulator with high optical power saturation

In summary, we proposed the use of shallow, all-tensile-strained InGaAsP-InGaAsP MQW polarisation independent electro-optical modulators with InAsP relief layers. Very low polarization dependence (<0.5 dB) is observed and efficient modulation observed (-1 V drive voltage). The measurements suggest the optical power saturation >20 dBm (100 mW), as confirmed by the very low carrier escape time (20 ps). With such high optical power handling capacity, this type of QW should contribute to faster, more practical soliton systems