Characterization of semiconductor devices using technological and geometric parameters

In many cases the characterization of semiconductor devices in terms of their technological and geometric parameters is more important for process analysis and device design optimization than that in terms of electrical parameters. The authors present an extension to the FIT-3 parameter extraction program which allows the use of any combination of technological geometric and electrical parameters in characterization of semiconductor devices. The approach is flexible enough to be used for a variety of technologies and for all basic analyses (DC, AC and time-domain)