Study of optical and electrical properties of sputtered indium oxide films

Author

Predanocy, M. ; Fasaki, I. ; Wilke, M. ; Hotovy, I. ; Kosc, I. ; Spiess, L.

Author_Institution

Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2010

Firstpage

297

Lastpage

300

Abstract

The indium oxide films were deposited by dc reactive magnetron sputtering from In target on unheated Si substrate with oxygen flow in the ranging from 40 to 80 sccm. The deposited films were annealed in a conventional tube at T=400°C for 1 hour in N₂ atmosphere. Measured absorption coefficients of all indium oxide films were in the range the values of 2.6÷12.5×10⁶ m^-1. It was found that calculated values of the direct band gap and indirect band gap depend on oxygen content in the sputtering gas mixture. Electrical resistivity increased from 6.8×10³ to 28.5×10³ Ωcm with increasing oxygen flow 40 - 80 sccm. Finally, the correlation between optical properties and surface roughness of examined samples was identified.

Keywords

absorption coefficients; annealing; electrical resistivity; gas mixtures; indium compounds; semiconductor thin films; sputter deposition; surface roughness; wide band gap semiconductors; In₂O₃; Si; absorption coefficients; annealing; dc reactive magnetron sputtering; direct band gap; electrical properties; electrical resistivity; indirect band gap; optical properties; oxygen flow; sputtered indium oxide films; sputtering gas mixture; surface roughness; temperature 400 degC; time 1 hour; Absorption; Annealing; Indium; Optical films; Photonic band gap; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-8574-1

Type

conf

DOI

10.1109/ASDAM.2010.5667003

Filename

5667003