Title :
100mV noise performances of Te-doped Sb-HEMT
Author :
Noudeviwa, A. ; Olivier, A. ; Roelens, Y. ; Danneville, F. ; Wichmann, N. ; Waldhoff, N. ; Desplanque, L. ; Wallart, X. ; Bollaert, S.
Author_Institution :
Inst. d´´Electron. de Microelectron. et de Nanotechnol. (IEMN), Univ. de Lille I, Villeneuve d´´Ascq, France
Abstract :
In this paper, we present the noise measurement results of InAs/AlSb HEMTs at room temperature under very low drain bias (100mV) at 30GHz. Under these dc bias conditions the transistor exhibit NFmin=1.56 dB and Gass=5.3dB @30 GHz for Pdc= 7.3μW/μm. These results are compared to our previous work and the great improvements observed open up the possibility to develop a 100mV electronics at room temperature.
Keywords :
aluminium compounds; antimony; high electron mobility transistors; indium compounds; semiconductor device noise; tellurium; HEMT; InAs-AlSb; dc bias conditions; frequency 30 GHz; noise figure 1.56 dB; noise figure 5.3 dB; noise performances; room temperature; voltage 100 mV; HEMTs; Low-noise amplifiers; MODFETs; Noise; Noise measurement; Performance evaluation; Temperature measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5667012
