DocumentCode :
1623167
Title :
Metal-Oxide-Junction, Triple-Point Cathodes for High Current Vacuum Electron Devices
Author :
Jordan, N.M. ; Gilgenbach, R.M. ; Lau, Y.Y. ; Hoff, B.W. ; Cruz, E.J. ; French, D.M. ; Gomez, M.R. ; Pengvanich, P. ; Zier, J. ; Jones, M.C.
Author_Institution :
Michigan Univ., Ann Arbor
fYear :
2007
Firstpage :
531
Lastpage :
531
Abstract :
Previous experiments at the University of Michigan have explored the mechanism of electron emission from triple points (vacuum-conductor-dielectric interface) for application to high current cathodes. Recent experiments have fabricated metal-oxide junction (MOJ) cathodes consisting of hafnium oxide (HfO2) coatings over metal (#304 stainless steel) substrates. High dielectric constant HfO2 coatings are deposited by ablation-plasma-ion lithography (APIL) using a KrF laser at 248 nm and 50 J/cm2 fluence. Experiments were performed on the Michigan Electron Long-Beam Accelerator (MELBA), with a relativistic magnetron, at parameters V=-300 kV, currents 1-15 kA, and pulse-lengths of 0.3-0.5 microseconds. Preliminary experiments tested three cathode configurations: 1) stainless steel cathode - no coating 2) stainless steel cathode - totally coated with HfO2 (approximately 0.5 microns thick), and 3) stainless steel cathode - coated with patterned arrays of HfO2 islands Experimental data show initial peak currents for the third case, HfO2 islands, reached an average of 6 kA, which was 60% larger than either of the other two cases. Current turn-on and rise time are also significantly faster for the patterned arrays of HfO2. Future experiments will explore the effect of another innovative cathode consisting of HfO2 dielectric islands exposed to vacuum between two conductors, (cathode and a top metal layer). A semi-analytic theory is developed to assess electron multiplication in the immediate vicinity of a triple point.
Keywords :
cathodes; electron emission; electron multipliers; hafnium compounds; magnetrons; stainless steel; FeCCrJk; HfO2; Michigan Electron Long-Beam Accelerator; ablation-plasma-ion lithography; current 1 kA to 15 kA; dielectric constant; electron emission; electron multiplication; hafnium oxide coatings; high current vacuum electron devices; metal-oxide-junction cathodes; relativistic magnetron; stainless steel cathodes; time 0.3 ms to 0.5 ms; triple-point cathodes; wavelength 248 nm; Cathodes; Coatings; Dielectric substrates; Electron devices; Electron emission; Hafnium oxide; High-K gate dielectrics; Laser ablation; Lithography; Steel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2007. ICOPS 2007. IEEE 34th International Conference on
Conference_Location :
Albuquerque, NM
ISSN :
0730-9244
Print_ISBN :
978-1-4244-0915-0
Type :
conf
DOI :
10.1109/PPPS.2007.4345837
Filename :
4345837
Link To Document :
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