Title :
Assessing reliability of nano-scaled CMOS technologies one defect at a time
Author :
Kaczer, Ben ; Grasser, Tibor ; Franco, Jacopo ; Luque, M.T. ; Weckx, Pieter ; Roussel, P.J. ; Groeseneken, Guido
Author_Institution :
Imec, Leuven, Belgium
Abstract :
In the deeply downscaled CMOS technologies with ~10 nm gate lengths only a handful of defects will be present in each device, while their relative impact on the device characteristics will be significant. The behavior of these defects is stochastic, voltage and temperature dependent, and widely distributed in time, resulting in each device behaving very differently during operation (Fig. 1) [1,2].
Keywords :
CMOS integrated circuits; integrated circuit reliability; nanoelectronics; defects; device characteristics; nanoscaled CMOS technologies; reliability; stochastic behavior; temperature dependence; voltage dependence; Degradation; Field effect transistors; High K dielectric materials; Logic gates; Nanoscale devices; Reliability; Stress;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636222
