DocumentCode
1623467
Title
Broadband GaAs-oscillators of mm-range [utilizing Gunn diodes]
Author
Dyadchenko, A.V. ; Mishnyov, A.A. ; Polyanski, N.E.
Author_Institution
V.N. Karazin Kharkiv Nat. Univ., Ukraine
Volume
2
fYear
2004
Firstpage
543
Abstract
In this paper, the design and performance of mm-range broadband oscillators in wave guide, coaxial-wave guide and microstrip configurations are considered. The power, frequency and temperature characteristics of the offered oscillators are both experimentally and theoretically investigated. As active elements of oscillators, GaAs-Gunn diodes are used, both as developed and made in the faculty of semiconductor and vacuum electronics, and commercially available industrial GaAs-Gunn diodes.
Keywords
Gunn diodes; III-V semiconductors; coaxial waveguides; gallium arsenide; microstrip circuits; millimetre wave oscillators; waveguides; GaAs; Gunn diode active elements; coaxial wave guides; frequency characteristics; microstrips; mm-range broadband oscillators; power characteristics; temperature characteristics; Acceleration; Cathodes; Coaxial components; Electrons; Frequency; Gallium arsenide; Gunn devices; Oscillators; Resonance; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves, 2004. MSMW 04. The Fifth International Kharkov Symposium on
Print_ISBN
0-7803-8411-3
Type
conf
DOI
10.1109/MSMW.2004.1346000
Filename
1346000
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