Title :
Broadband GaAs-oscillators of mm-range [utilizing Gunn diodes]
Author :
Dyadchenko, A.V. ; Mishnyov, A.A. ; Polyanski, N.E.
Author_Institution :
V.N. Karazin Kharkiv Nat. Univ., Ukraine
Abstract :
In this paper, the design and performance of mm-range broadband oscillators in wave guide, coaxial-wave guide and microstrip configurations are considered. The power, frequency and temperature characteristics of the offered oscillators are both experimentally and theoretically investigated. As active elements of oscillators, GaAs-Gunn diodes are used, both as developed and made in the faculty of semiconductor and vacuum electronics, and commercially available industrial GaAs-Gunn diodes.
Keywords :
Gunn diodes; III-V semiconductors; coaxial waveguides; gallium arsenide; microstrip circuits; millimetre wave oscillators; waveguides; GaAs; Gunn diode active elements; coaxial wave guides; frequency characteristics; microstrips; mm-range broadband oscillators; power characteristics; temperature characteristics; Acceleration; Cathodes; Coaxial components; Electrons; Frequency; Gallium arsenide; Gunn devices; Oscillators; Resonance; Semiconductor diodes;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves, 2004. MSMW 04. The Fifth International Kharkov Symposium on
Print_ISBN :
0-7803-8411-3
DOI :
10.1109/MSMW.2004.1346000
