Title :
Impact of noise temperature constant and diffusion coefficient on the minimum noise figure and minimum noise temperature of InAlAs/InGaAs DGHEMT
Author :
Bhattacharya, Mahua ; Gupta, Madhu ; Jogi, Jyotika ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
In this paper, the impact of noise temperature constant (δ) and diffusion coefficient (D) on the noise performance of InAlAs/InGaAs DG-HEMT is studied using charge control based model. The noise temperature constant (δ) is observed to have a significant effect on the minimum noise figure (NFmin) and minimum noise temperature (Tmin) over the entire range of drain current whereas the effect of D on NFmin and Tmin is observed to be prominent mainly at high values of drain current where the diffusion noise dominates.
Keywords :
III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor device noise; InAlAs-InGaAs; InAlAs-InGaAs DG-HEMT; charge control based model; diffusion coefficient; double-gate HEMT; drain current; minimum noise figure; minimum noise temperature; noise temperature constant; HEMTs; Indium gallium arsenide; Logic gates; Noise; Noise figure; Temperature control; HEMT; InAlAs/InGaAs; diffusion coefficient; double-gate; noise figure; noise temperature constant;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636226
