Simulation of short Gunn diode with resonant-tunneling cathode

The output characteristics of mm-range Gunn diodes are mainly determined by the cathode contact. For increasing of the output power, efficiency and cutoff frequency of generation, cathode contacts are used which provide a high level of electron energy at the cathode, as a rule. Another opportunity to increase the generation efficiency and working cutoff frequency of diodes is the interaction of the intervalley transfer electrons with modulation of the conductivity of the active area of the diode. It is possible to control the conductivity of the active area of the diode, for example, by means of electron tunneling injection from the cathode contact. In the present report, some results of research work on a Gunn diode (GD) with a resonant-tunneling diode (RTD) as the cathode are presented.