InGaAs-TEDs with variband layer [transferred-electron diodes]

Author

Storozhenko, I.P. ; Arkusha, Yu V.

Author_Institution

V.N. Karazin Kharkov Nat. Univ., Kharkiv, Ukraine

Volume

2

fYear

2004

Firstpage

555

Abstract

Different types of cathode contacts are used in TEDs (transferred-electron diodes) with millimetric waves range for increase of output power and maximum generation frequency. This is, as a rule, abrupt homo- or heterojunctions. However, in graded composition III-V threefold semiconductors (variband semiconductors) the electron concentration in lateral valleys is spatially nonuniform without electron gas heating. The aim of this work is to find a system of equations for the two-level (or two-temperature model), which can be used for research of physical processes in variband diodes and to calculate the power and frequency characteristics of some variband diodes.

Keywords

Gunn diodes; III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; InGaAs; cathode contacts; graded composition III-V threefold semiconductors; lateral valley electron concentration; mm-wave diodes; spatially nonuniform electron concentration; transferred-electron diodes; variband diodes; variband layer TED; variband semiconductors; Cathodes; Electrons; Equations; Frequency; Heating; Heterojunctions; III-V semiconductor materials; Power generation; Power system modeling; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves, 2004. MSMW 04. The Fifth International Kharkov Symposium on

Print_ISBN

0-7803-8411-3

Type

conf

DOI

10.1109/MSMW.2004.1346008

Filename

1346008