Title :
A new set of electrical test structures for simultaneous single-wafer monitoring of ion implant shadowing, channeling, and dose uniformity
Author :
McCarthy, Anthony M. ; Lukaszek, W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
A set of novel ion implant electrical test structures designed to measure shadowing channeling, and dose uniformity effects for the purpose of implanter calibration and evaluation has been designed and integrated onto one wafer, permitting the simultaneous monitoring of these effects in a single implant. The mask set has been designed so that it can be used in monitoring either p-type or n-type implants. It has been possible to fabricate eight different structures on a single wafer using only six mask levels. Results of experiments using these structures are presented and discussed
Keywords :
calibration; integrated circuit technology; integrated circuit testing; ion implantation; monitoring; channeling; dose uniformity; electrical test structures; implanter calibration; ion implant shadowing; n-type implants; p-type implants; single-wafer monitoring; Boron; Electric variables measurement; Fabrication; Implants; Monitoring; Optical surface waves; Shadow mapping; Silicon; System testing; Ultra large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161733
