DocumentCode :
1623939
Title :
WARP Speed IGBTs-switching at 100 to 150 kHz in power converter applications
Author :
Ambarian, Chris ; Chao, Chesley
Author_Institution :
Switch Strategic Marketing, Int.. Rectifier, El Segundo, CA, USA
fYear :
1997
Firstpage :
276
Lastpage :
280
Abstract :
International Rectifier´s latest development in IGBT technology has offered the power converter industry with optimized power switches-the WARP SpeedTM IGBTs. They have switching characteristics that are very close to those of power MOSFETs, without sacrificing the inherently superior conduction characteristics of IGBTs. Thus, in higher-power power supply type applications where power MOSFETs can become prohibitively expensive, the IGBT offers a more cost-effective solution
Keywords :
insulated gate bipolar transistors; power convertors; power semiconductor switches; 100 to 150 kHz; International Rectifier; WARP Speed IGBT; conduction; power converter; power supply; power switch; switching; Circuits; Costs; Frequency; Insulated gate bipolar transistors; MOSFETs; Power generation; Switches; Switching converters; Switching loss; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wescon/97. Conference Proceedings
Conference_Location :
Santa Clara, CA
ISSN :
1095-791X
Print_ISBN :
0-7803-4303-4
Type :
conf
DOI :
10.1109/WESCON.1997.632349
Filename :
632349
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1623939
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