RF performance of dual metal cylindrical/surrounded gate MOSFET for high switching speed applications

Author

Ghosh, Prosenjit ; Gupta, Madhu ; Haldar, Subhasis ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2012

Firstpage

1

Lastpage

4

Abstract

In this paper, a comprehensive study on the RF performance of the dual metal gate (DMG) surrounded/cylindrical gate MOSFET (SGT/CGT) is performed using an ATLAS 3D device simulator. Further it is been compared with single metal gate (SMG) surrounded/cylindrical gate MOSFET. Simulation results reveals that the DMG CGT/SGT MOSFET with different channel length displays a significant enhancement in the drain current, maximum available power gain, maximum stable power gain, current gain and stem stability factor as compared to single metal gate. The results so obtained are, thus useful for optimizing the performance and reliability of nano-scale DMG CGT/SGT MOSFETs for high-speed logic, switching and RF applications.

Keywords

MOSFET; microwave field effect transistors; semiconductor device models; ATLAS 3D device simulator; RF performance; channel length; current gain; drain current; dual metal cylindrical/surrounded gate MOSFET; high switching speed applications; maximum available power gain; maximum stable power gain; stem stability factor; Circuit stability; Gain; Logic gates; MOSFET; Performance evaluation; Radio frequency; Stability analysis; Cylindrical/Surrounded gate (CGT/SGT) MOSFET; Dual metal gate (DMG); Low noise amplifier (LNA); Maximum available power gain (Gma); Maximum stable power gain (Gms); Radio Frequency (RF); Short Channel Effects (SCEs); current gain; single metal gate (SMG); stem stability factor (SSF);

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2012 International Conference on

Conference_Location

Mumbai

Print_ISBN

978-1-4673-3135-7

Type

conf

DOI

10.1109/ICEmElec.2012.6636242

Filename

6636242