Title :
Large photoresponse of a single Si nanowire (diameter ∼50nm) Metal-Semiconductor-Metal device
Author :
Das, Krishanu ; Samanta, Suranjana ; Raychaudhuri, A.K. ; Kumar, Pranaw ; Narayan, Karthik S.
Author_Institution :
Sector-III, S.N.Bose Nat. Centre for Basic Sci., Kolkata, India
Abstract :
The photoresponse of a single Si nanowire (50 nm diameter) is reported. The Metal-Semiconductor-Metal device structure is made by focused ion beam assisted Platinum deposited contacts on the single nanowire. Upon illumination with 405 nm light, the nanowires shows a large photoresponse even at zero bias. The dark and illuminated I-V curves have been analyzed using MSM device structure showing that there is lowering of the work function at the junctions on illumination and also a photoconductive component in the response. The response exhibits a rapid turn on/off of the photo-current when the light is turned on/off and can follow the light modulations upto a frequency of 4kHz.
Keywords :
elemental semiconductors; focused ion beam technology; metal-semiconductor-metal structures; nanoelectronics; nanowires; photoconductivity; photodetectors; platinum; silicon; work function; Pt; Si; dark I-V curves; focused ion beam assisted platinum deposited contacts; illuminated I-V curves; illumination; light modulations; metal-semiconductor-metal device; photo-current; photoconductive component; photoresponse; single Si nanowire; size 50 nm; wavelength 405 nm; work function; Electrodes; Junctions; Lighting; Nanoscale devices; Photoconductivity; Silicon; Temperature measurement; Photoresponse; Si nanowire; single Nanowire;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636246
