DocumentCode
1624325
Title
Lifetime projection and degradation mechanism of 1.3-μm InGaAsP/InP uncooled laser diodes
Author
Hwang, Nam ; Cho, Ho-Sung ; Lee, Hee-Tae ; Song, Min-Kyu ; Kim, Hong-Man ; Pyun, Kwang-Eui
Author_Institution
Compound Semicond. Res. Dept., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fYear
1997
Firstpage
222
Lastpage
223
Abstract
The purpose of this paper is to present reliability analysis of l.3 μm InGaAsP-InP uncooled MQW laser diodes, and to demonstrate reliability projections and failure mechanisms by accelerated aging tests
Keywords
III-V semiconductors; ageing; gallium arsenide; gallium compounds; indium compounds; laser reliability; optical testing; quantum well lasers; semiconductor device testing; 1.3 mum; InGaAsP-InP; InGaAsP-InP uncooled MQW laser diodes; InGaAsP/InP uncooled laser diodes; accelerated aging tests; degradation mechanism; failure mechanisms; lifetime projection; reliability analysis; reliability projections; Aging; Degradation; Diode lasers; Failure analysis; Indium phosphide; Optical fiber communication; Quantum well devices; Temperature; Testing; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication. OFC 97., Conference on
Conference_Location
Dallas, TX
Print_ISBN
1-55752-480-7
Type
conf
DOI
10.1109/OFC.1997.719838
Filename
719838
Link To Document